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| RF3100-2 2 Typical Applications * 3V CDMA/AMPS Cellular Handsets * 3V CDMA2000/1X Cellular Handsets * Spread-Spectrum Systems * Designed for Compatibility with Qualcomm Chipsets 3V 900MHZ LINEAR AMPLIFIER MODULE 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product Description The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V CDMA/AMPS hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3100-2 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50 input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS 3.000 0.100 0.800 sq typ 1.700 2.500 NOTE: Nominal thickness, 1.55 mm. 0.600 u Package Style: LGM (6mmx6mm) GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * Input/Output Internally Matched@50 * Single 3V Supply * 28dBm Linear Output Power * 29dB Linear Gain VCC1 1 7 GND RF IN 2 6 RF OUT * 45mA Idle Current VREG 3 4 VMODE 5 VCC2 Ordering Information RF3100-2 3V 900MHz Linear Amplifier Module RF3100-2 PCBA Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A3 011017 2-269 RF3100-2 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT 31dBm) Control Voltage (VREG) Rating +8.0 +5.2 +4.2 +10 +3.5 -30 to +110 -30 to +150 Unit VDC VDC VDC dBm VDC C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Input RF Power Mode Voltage (VMODE) Operating Case Temperature Storage Temperature Parameter High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Specification Min. Typ. Max. Unit Condition Typical Performance at VCC =3.2V, VREG =2.85V, TAMB =25C, Frequency=824MHz to 849MHz (unless otherwise specified) 824 26 849 29 -35 -40 28 35 -48 -57.0 -45 -54.5 <2:1 10:1 6:1 MHz dB dBc dBc dBm % dBc dBc VCC =3.2V, POUT =28dBm (room temperature) ACPR @885kHz, POUT =Max POUT ACPR @1980kHz, POUT =Max POUT No damage. No oscillations. >-70dBc At 45MHz offset. Typical Performance at VCC =3.2V, VREG =2.85V, TAMB =25C, Frequency=824MHz to 849MHz (unless otherwise specified) -135 dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Adjacent Channel Power Rejection Input VSWR Output VSWR 824 18 849 21 -35 -40 MHz dB dBc dBc dBm dBc dBc 16 -51 -62 -46 -59 2.5:1 10:1 6:1 ACPR @885kHz, POUT =Max POUT ACPR @1980kHz, POUT =Max POUT No damage. No oscillations. >-70dBc 2-270 Rev A3 011017 RF3100-2 Parameter Specification Min. Typ. Max. Unit Condition Typical Performance at VCC =3.2V, VREG =2.85V, TAMB =25C, Frequency=824MHz to 849MHz (unless otherwise specified) 824 28 -35 -40 31.5 44 <2:1 10:1 6:1 3.2 3.7 140 45 4.2 200 80 10 1 <40 V mA mA mA mA s 849 MHz dB dBc dBc dBm % FM Mode Frequency Range Gain Second Harmonic Third Harmonic Max CW Output Power Total Efficiency (AMPS mode) Input VSWR Output VSWR 2 VCC =3.7V, VREG =2.85V, POUT =31.5dBm (room temperature) No damage. No oscillations. >-70dBc TAMB =25C VMODE =Low, VREG =2.85V VMODE =High, VREG =2.85V VMODE =High VREG switch from Low to High, ICC to within 90% of the final value, POUT within 1dB of the final value VREG =Low, VMODE =Low POWER AMPLIFIERS DC Supply Supply Voltage Range Quiescent Current VREG Current VMODE Current Turn On/Off Time Total Current (Power Down) VREG "Low" Voltage VREG "High" Voltage VMODE "Low" Voltage VMODE "High" Voltage 3 0 2.8 0 2.0 2.85 5 0.5 2.9 0.5 3.0 A V V V V Rev A3 011017 2-271 RF3100-2 Pin 1 2 3 Function VCC1 RF IN VREG VMODE VCC2 RF OUT GND GND Description First stage collector supply. A low frequency decoupling capacitor (e.g., 4.7F) is required. RF input internally matched to 50. This input is internally AC-coupled. Regulated voltage supply for amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW (<0.5V). For nominal operation (High Power Mode), VMODE is set LOW. When set HIGH, devices are turned off to improve efficiency. Output stage collector supply. A low frequency decoupling capacitor (e.g., 4.7F) is required. RF output internally matched to 50. This output is internally AC-coupled. Ground connection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to ground plane. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. Interface Schematic 2 POWER AMPLIFIERS 4 5 6 7 Pkg Base 2-272 Rev A3 011017 RF3100-2 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC1 C2 4.7 F J2 RF IN 50 strip 2 6 50 strip J6 RF OUT 1 7 2 POWER AMPLIFIERS VREG C4 4.7 F 3 C3 4.7 F 4 5 C1 4.7 F VMODE VCC2 Rev A3 011017 2-273 RF3100-2 Evaluation Board Layout Board Size 1.5" x 1.5" Board Thickness 0.032", Board Material FR-4, Multi-Layer, Ground Plane at 0.014" 2 POWER AMPLIFIERS 2-274 Rev A3 011017 |
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